AO3415 general description product summary parameter -20v i d (at v gs =-4.5v) -4a r ds(on) (at v gs = -4.5v) < 43m w r ds(on) (at v gs = -2.5v) < 54m w r ds(on) (at v gs = -1.8v) < 73m w symbol v ds esd protected the AO3415 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable fo r use as a load switch applications. v ds v maximum parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage -20 units 20v p-channel mosfet d g s sot23 top view bottom view s g d v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl v c thermal characteristics units c/w r q ja 65 85 80 drain-source voltage -20 a i d -4 continuous drain current v 8 gate-source voltage maximum junction-to-ambient a t a =25c t a =70c parameter typ pulsed drain current c max w 1.5 maximum junction-to-lead c/w c/w -3.5 -30 100 maximum junction-to-ambient a d 43 power dissipation b p d 52 t a =25c 1 t a =70c junction and storage temperature range -55 to 150 d g s sot23 top view bottom view s g d rev 6: july 2010 www.aosmd.com page 1 of 5
AO3415 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.3 -0.57 -0.9 v i d(on) -30 a 37 43 t j =125c 52 62 45 54 m w 54 73 m w 65 m w g fs 20 s v sd -0.64 -1 v i s -2 a c iss 620 780 940 pf c oss 80 115 150 pf c rss 50 80 110 pf q g 7.4 9.3 11 nc q gs 1.2 1.5 1.8 nc q gd 1 1.8 2.5 nc t d(on) 120 ns t 240 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =-4.5v, v =-10v, r =2.5 w , total gate charge v gs =-4.5v, v ds =-10v, i d =-4a gate source charge gate drain charge r ds(on) m w i s =-1a,v gs =0v v ds =-5v, i d =-4a v gs =-2.5v, i d =-4a v gs =-1.5v, i d =-1a v gs =-1.8v, i d =-2a v ds =v gs i d =-250 m a v ds =0v, v gs = 8v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage static drain-source on-resistance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-4a reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz switching parameters t r 240 ns t d(off) 2.8 m s t f 2 m s t rr 11 14 17 ns q rr 24 30 36 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. rev 0: january 2009 body diode reverse recovery charge i f =-4a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =2.5 w , r gen =3 w turn-off fall time body diode reverse recovery time i f =-4a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 6: july 2010 www.aosmd.com page 2 of 5
AO3415 typical electrical and thermal characteristics 17 52 10 0 18 0 3 6 9 12 15 0 0.5 1 1.5 2 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) 25 c 125 c v ds =-5v v gs =-1.8v v gs =-4.5v 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v -2.0v - 4.5v -8v -2.5v -3.0v v gs =-2.5v v gs =-1.5v i d =-4a, v gs =-4.5v i d =-4a, v gs =-2.5v i d =-2a, v gs =-1.8v 40 0 3 6 9 12 15 0 0.5 1 1.5 2 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 125 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) 20 40 60 80 100 120 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-4a 25 125 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v -2.0v - 4.5v -8v -2.5v -3.0v v gs =-2.5v v gs =-1.5v i d =-4a, v gs =-4.5v i d =-4a, v gs =-2.5v i d =-2a, v gs =-1.8v rev 6: july 2010 www.aosmd.com page 3 of 5
AO3415 typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-4a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 100ms t j(max) =150 c t a =25 c 0 1 2 3 4 5 0 2 4 6 8 10 12 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-4a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =100 c/w 100ms t j(max) =150 c t a =25 c rev 6: july 2010 www.aosmd.com page 4 of 5
AO3415 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt rr q = - idt t rr -isd f -i v dc d u t v dd vgs v ds v gs r l r g resistive switching test circuit & w aveform s - + vgs v ds t t t t t t 90% 10% r o n d(o ff) f o ff d(o n) vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig v gs - + v d c d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt r m rr v dd v dd q = - idt t rr -isd -vds f -i -i v dc d u t v dd vgs v ds v gs r l r g resistive switching test circuit & w aveform s - + vgs v ds t t t t t t 90% 10% r o n d(o ff) f o ff d(o n) rev 6: july 2010 www.aosmd.com page 5 of 5
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